This system is comprised of two chambers. Each chamber can be used for deposition of maximum three different materials on a single substrate using thermal evaporation technique.

  • Base Pressure < 2x10-7 Torr
  • Leak Rate < 10-8 Torr.l/s
  • Substrate Size 3" diameter
  • Substrate Heating Max. 500 oC
  • Substrate Rotation 3 - 30 rpm
  • Thickness Measurement In-situ measurement with Quartz X-tal Oscillator
  • Number of Sources 6 Resistive thermal evaporation sources
  • Deposition Mode Upward (all sources)
  • Control Full automatic pumping, manual evaporation

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Other Thermal Evaporation