CVD Handy Tube
Low Pressure Chemical Vapor Deposition System (LPCVD) is similar to other types of CVD where gaseous species reacts on a solid surface or wafer. The LPCVD process has a quartz tube co-axially placed in tube furnace. The main advantages of LPCVD are the excellent uniformity of thickness and purity, simple handling, homogeneity of deposited layers and high reproducibility.
This “CVD-handy tube” series is a high temperature CVD system, most successfully applied in deposition of graphene, carbon nanotubes and nanowires (ZnO, GeO).
- Ultimate Vacuum Pressure ≈ 10-6 Torr
- Quartz Tube Diameter max. 130 mm
- Max. Temperature 1100oC
- Continuous Working Temperature 1050oC
- Heating Area Length 250 mm
- Temperature Control System PID method
- Cooling Rapid cooling with lifting mechanism
- Loading From one end of the quartz tube
- Control Fully Automatic (Semi-Automatic is Optional)
- Number of MFC’s for different Gas Types Max 12
If requested, our CVD-handy tube systems can be combined with Inductively Coupled Plasma (ICP).
