Low Pressure Chemical Vapor Deposition System (LPCVD) is similar to other types of CVD where gaseous species reacts on a solid surface or wafer. The LPCVD process has a quartz tube co-axially placed in tube furnace. The main advantages of LPCVD are the excellent uniformity of thickness and purity, simple handling, homogeneity of deposited layers and high reproducibility.

This “CVD-handy tube” series is a high temperature CVD system, most successfully applied in deposition of graphene, carbon nanotubes and nanowires (ZnO, GeO).

  • Ultimate Vacuum Pressure ≈ 10-6 Torr
  • Quartz Tube Diameter max. 130 mm​
  • Max. Temperature  1100oC
  • Continuous Working Temperature 1050oC
  • Heating Area Length  250 mm
  • Temperature Control System  PID method
  • Cooling Rapid cooling with lifting mechanism
  • Loading  From one end of the quartz tube​
  • Control Fully Automatic (Semi-Automatic is Optional)​
  • Number of MFC’s for different Gas Types Max 12

If requested, our CVD-handy tube systems can be combined with Inductively Coupled Plasma (ICP).