This system can be used for deposition of a-Si:H, SiO2, Si3N4, DLC or similar thin films using Plasma Enhanced Chemical Vapor deposition technique.

  • Base Pressure < 2x10-7 Torr
  • Substrate Size 6" diameter​
  • Substrate Heating Max. 500 oC
  • Anode to Cathode Distance Adjustment Two direction standard 
  • Deposition Method Capacitively Coupled PE-CVD
  • Power Generator RF, 13.56 MHz
  • Loading From top
  • Control Full Automation by PC
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For more detailed information, send an e-mail to info@vaksis.com.