The Rapid Thermal Annealing or Processing System is particularly designed to heat samples at various linear and very high heating rates under vacuum and under low-pressure controlled atmosphere. RTAP process is done in a quartz tube coaxially placed in a heater assembly. The heating assembly utilizes “special-halogen-lamp-heating technique” in order to ramp up and cool down wafers.

Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate.

The same system can also be used in brazing applications to join different materials to each other without exposing them to deleterious oxygen atmosphere at high temperatures.

  • Ultimate Vacuum Pressure ≈ 10-6 Torr
  • Quartz Tube Diameter max. 130 mm
  • Max. Temperature 1050o
  • Linear Heating Rate Range 0.5-30oC/s up to 950oC
  • Temperature Measurement Thermocouple
  • Cooling Rapid cooling with removed furnace
  • Loading From one end of the quartz tube
  • Control Fully Automatic (Semi-Automatic is Optional)
  • Number of MFC’s for different Gas Types Max 12
  • Additional Gas Safety Available Upon Request

 

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