RIE Handy
Reactive-ion etching (RIE) is an etching technology. RIE system’s vacuum chamber geometry is in cylindrical shape. It uses chemically reactive plasma to remove material deposited on wafers. High-energy ions from the plasma attack the wafer surface and react with it.
- Ultimate Vacuum Pressure ≈ 10-7 Torr
- Substrate Size 4”- 8” diameter
- Cooling Substrate Holder
- Loading From the lift-open top plate or Load Lock
- Control Fully Automatic
- Power Sources RF power supply
- Number of MFC’s for different Gas Types Max. 12
- Gas Cabinet Included and Integrated to System Software
- Additional Gas Safety Available Upon Request
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